BSS138-7-F
Manufacturer: Diodes Incorporated
The DIODES-BSS138-7-F is a small signal MOSFET transistor designed for use in general-purpose switching and amplification applications. It features a low gate threshold voltage, making it easy to drive with low voltage signals.
Product parameters:
Manufacturer: Diodes Incorporated
Part number: BSS138-7-F
Type: N-channel MOSFET
Drain-source voltage (Vds): 50V
Continuous drain current (Id): 220mA
Total power dissipation (Pd): 625mW
Gate-source voltage (Vgs): ±20V
Gate threshold voltage (Vgs(th)): 0.8V to 2.0V
Drain-source on-state resistance (Rds(on)): 5.5Ω @ Vgs=10V, Id=220mA
Package: SOT-23
Product introduction:
The BSS138-7-F is a small but powerful N-channel MOSFET transistor that can be used in a variety of switching and amplification applications. Its low gate threshold voltage makes it easy to drive with low voltage signals, making it ideal for use in battery-powered applications. With a maximum drain-source voltage of 50V, a continuous drain current of 220mA, and a total power dissipation of 625mW, this transistor can handle a wide range of loads. It is housed in a small SOT-23 package, making it ideal for use in space-constrained applications.
Stock:9800
Minimum Order:1
The DIODES-BSS138-7-F is a small signal MOSFET transistor designed for use in general-purpose switching and amplification applications. It features a low gate threshold voltage, making it easy to drive with low voltage signals.
Product parameters:
Manufacturer: Diodes Incorporated
Part number: BSS138-7-F
Type: N-channel MOSFET
Drain-source voltage (Vds): 50V
Continuous drain current (Id): 220mA
Total power dissipation (Pd): 625mW
Gate-source voltage (Vgs): ±20V
Gate threshold voltage (Vgs(th)): 0.8V to 2.0V
Drain-source on-state resistance (Rds(on)): 5.5Ω @ Vgs=10V, Id=220mA
Package: SOT-23
Product introduction:
The BSS138-7-F is a small but powerful N-channel MOSFET transistor that can be used in a variety of switching and amplification applications. Its low gate threshold voltage makes it easy to drive with low voltage signals, making it ideal for use in battery-powered applications. With a maximum drain-source voltage of 50V, a continuous drain current of 220mA, and a total power dissipation of 625mW, this transistor can handle a wide range of loads. It is housed in a small SOT-23 package, making it ideal for use in space-constrained applications.
