IPD90P04P4L-04
Manufacturer: Infineon
The INFINEON-IPD90P04P4L-04 is a Power MOSFET designed for use in various applications including DC-DC converters, motor control, and battery management systems. Here are some of its key parameters and a brief introduction:
Drain-source voltage (Vdss): -40 V
Continuous drain current (Id): -90 A
Power dissipation (Pd): 252 W
Gate-source voltage (Vgs): ±20 V
Drain-source on-resistance (Rds(on)): 4.4 mOhm
Package type: TO252-3
The IPD90P04P4L-04 is part of Infineon's OptiMOS™ 5 product family, which features a low Rds(on) and high efficiency. This MOSFET has a high current rating of 90 A and a low on-resistance of 4.4 mOhm, making it suitable for high-power applications. Its TO252-3 package is compact and provides good thermal performance. Additionally, the IPD90P04P4L-04 features a low gate charge and low reverse recovery charge, which can help to reduce switching losses and improve efficiency in switching applications.
Stock:4507
Minimum Order:1
The INFINEON-IPD90P04P4L-04 is a Power MOSFET designed for use in various applications including DC-DC converters, motor control, and battery management systems. Here are some of its key parameters and a brief introduction:
Drain-source voltage (Vdss): -40 V
Continuous drain current (Id): -90 A
Power dissipation (Pd): 252 W
Gate-source voltage (Vgs): ±20 V
Drain-source on-resistance (Rds(on)): 4.4 mOhm
Package type: TO252-3
The IPD90P04P4L-04 is part of Infineon's OptiMOS™ 5 product family, which features a low Rds(on) and high efficiency. This MOSFET has a high current rating of 90 A and a low on-resistance of 4.4 mOhm, making it suitable for high-power applications. Its TO252-3 package is compact and provides good thermal performance. Additionally, the IPD90P04P4L-04 features a low gate charge and low reverse recovery charge, which can help to reduce switching losses and improve efficiency in switching applications.
