SURS5670T3G
Manufacturer: Onsemi
Product: SURS5670T3G
Manufacturer: ON Semiconductor
General Description:
SURS5670T3G is an N-channel MOSFET transistor designed for high-speed switching applications. This device is produced using ON Semiconductor's proprietary Trench 9 technology.
Product Parameters:
Drain-Source Voltage (Vdss): 60 V
Continuous Drain Current (Id): 10 A
Gate-Source Voltage (Vgs): ±20 V
Total Gate Charge (Qg): 8.3 nC
Drain-Source On-Resistance (Rds(on)): 14 mΩ
Power Dissipation (Pd): 2 W
Operating Junction Temperature (Tj): -55°C to +150°C
Storage Temperature (Tstg): -55°C to +150°C
Features:
Low Rds(on) for high efficiency and low power dissipation
High-speed switching capability
RoHS compliant
Halogen-free
Applications:
DC-DC converters
Motor control
Power management
High-speed switching circuits
Product Details:
The SURS5670T3G is a surface-mount MOSFET with a TO-263 (D2PAK) package. It has a gate-source voltage rating of ±20 V and a drain-source voltage rating of 60 V, making it suitable for a variety of high-speed switching applications. The device has a low on-resistance of 14 mΩ and a total gate charge of 8.3 nC, making it highly efficient and suitable for use in high-power applications. It is RoHS compliant and halogen-free, making it environmentally friendly. The operating junction temperature range is -55°C to +150°C, allowing the device to operate in a wide range of environments.
Stock:4377
Minimum Order:1
Product: SURS5670T3G
Manufacturer: ON Semiconductor
General Description:
SURS5670T3G is an N-channel MOSFET transistor designed for high-speed switching applications. This device is produced using ON Semiconductor's proprietary Trench 9 technology.
Product Parameters:
Drain-Source Voltage (Vdss): 60 V
Continuous Drain Current (Id): 10 A
Gate-Source Voltage (Vgs): ±20 V
Total Gate Charge (Qg): 8.3 nC
Drain-Source On-Resistance (Rds(on)): 14 mΩ
Power Dissipation (Pd): 2 W
Operating Junction Temperature (Tj): -55°C to +150°C
Storage Temperature (Tstg): -55°C to +150°C
Features:
Low Rds(on) for high efficiency and low power dissipation
High-speed switching capability
RoHS compliant
Halogen-free
Applications:
DC-DC converters
Motor control
Power management
High-speed switching circuits
Product Details:
The SURS5670T3G is a surface-mount MOSFET with a TO-263 (D2PAK) package. It has a gate-source voltage rating of ±20 V and a drain-source voltage rating of 60 V, making it suitable for a variety of high-speed switching applications. The device has a low on-resistance of 14 mΩ and a total gate charge of 8.3 nC, making it highly efficient and suitable for use in high-power applications. It is RoHS compliant and halogen-free, making it environmentally friendly. The operating junction temperature range is -55°C to +150°C, allowing the device to operate in a wide range of environments.
