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RJK1535DPE-LE

Manufacturer: Renesas


Renesas-RJK1535DPE-LE
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RJK1535DPE-LE

The RJK1535DPE-LE,from Renesas,is Specialized ICsWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

RJK1535DPE-LE is a Power MOSFET transistor manufactured by Renesas Electronics. It is designed for use in high-voltage, high-current applications such as power supplies, DC-DC converters, and motor drives.


Product parameters:

Drain-source voltage (Vdss): 350V

Continuous drain current (Id): 20A

Power dissipation (Pd): 150W

Gate-source voltage (Vgs): ±30V

Drain-source on-state resistance (Rds(on)): 0.11Ω (typ.)

Input capacitance (Ciss): 1700pF (typ.)

Output capacitance (Coss): 310pF (typ.)

Reverse transfer capacitance (Crss): 270pF (typ.)


Product description:

RJK1535DPE-LE is a high-performance Power MOSFET transistor that offers excellent switching performance and low on-state resistance. It features a low gate charge and fast switching speed, which makes it suitable for high-frequency switching applications. The device has an integrated Schottky diode between the source and drain, which reduces the reverse recovery time and improves the efficiency of the device. The RJK1535DPE-LE is designed to withstand high voltage and current, making it ideal for use in power supply and motor control applications.


The RJK1535DPE-LE,from Renesas,is Specialized ICsWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

RJK1535DPE-LE is a Power MOSFET transistor manufactured by Renesas Electronics. It is designed for use in high-voltage, high-current applications such as power supplies, DC-DC converters, and motor drives.


Product parameters:

Drain-source voltage (Vdss): 350V

Continuous drain current (Id): 20A

Power dissipation (Pd): 150W

Gate-source voltage (Vgs): ±30V

Drain-source on-state resistance (Rds(on)): 0.11Ω (typ.)

Input capacitance (Ciss): 1700pF (typ.)

Output capacitance (Coss): 310pF (typ.)

Reverse transfer capacitance (Crss): 270pF (typ.)


Product description:

RJK1535DPE-LE is a high-performance Power MOSFET transistor that offers excellent switching performance and low on-state resistance. It features a low gate charge and fast switching speed, which makes it suitable for high-frequency switching applications. The device has an integrated Schottky diode between the source and drain, which reduces the reverse recovery time and improves the efficiency of the device. The RJK1535DPE-LE is designed to withstand high voltage and current, making it ideal for use in power supply and motor control applications.


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