FM22L16-55-TG
Manufacturer: Cypress
The Cypress FM22L16-55-TG is a 16 Mb (2M x 8-bit) Serial (SPI) F-RAM Memory. It provides superior performance with a high-speed read and write access time of 55 ns, low power consumption, and virtually unlimited read and write endurance cycles.
Product parameters:
Memory type: F-RAM
Memory size: 16 Mb (2M x 8-bit)
Interface type: SPI
Operating voltage: 2.7V to 3.6V
Access time: 55 ns
Operating temperature range: -40°C to 85°C
Package type: SOIC
Product introduction:
The Cypress FM22L16-55-TG is a high-performance, non-volatile memory device that uses ferroelectric technology to store data. It is ideal for applications that require frequent and fast read/write access to memory, such as industrial control systems, smart meters, and automotive systems.
Compared to traditional memory devices such as EEPROM and Flash, F-RAM offers superior performance and reliability, with much faster read and write speeds and virtually unlimited endurance cycles. Additionally, F-RAM does not suffer from data retention issues, which means that data can be stored for decades without the need for refresh operations.
The FM22L16-55-TG operates on a low voltage range of 2.7V to 3.6V and can operate over a wide temperature range of -40°C to 85°C, making it suitable for use in harsh environments. It is available in a compact SOIC package, making it easy to integrate into a wide range of designs.
Stock:9000
Minimum Order:1
The Cypress FM22L16-55-TG is a 16 Mb (2M x 8-bit) Serial (SPI) F-RAM Memory. It provides superior performance with a high-speed read and write access time of 55 ns, low power consumption, and virtually unlimited read and write endurance cycles.
Product parameters:
Memory type: F-RAM
Memory size: 16 Mb (2M x 8-bit)
Interface type: SPI
Operating voltage: 2.7V to 3.6V
Access time: 55 ns
Operating temperature range: -40°C to 85°C
Package type: SOIC
Product introduction:
The Cypress FM22L16-55-TG is a high-performance, non-volatile memory device that uses ferroelectric technology to store data. It is ideal for applications that require frequent and fast read/write access to memory, such as industrial control systems, smart meters, and automotive systems.
Compared to traditional memory devices such as EEPROM and Flash, F-RAM offers superior performance and reliability, with much faster read and write speeds and virtually unlimited endurance cycles. Additionally, F-RAM does not suffer from data retention issues, which means that data can be stored for decades without the need for refresh operations.
The FM22L16-55-TG operates on a low voltage range of 2.7V to 3.6V and can operate over a wide temperature range of -40°C to 85°C, making it suitable for use in harsh environments. It is available in a compact SOIC package, making it easy to integrate into a wide range of designs.
