MCB200N06Y-TP
Manufacturer: Micro Commercial Co
Product Parameter:
Model: MCB200N06Y-TP
Manufacturer: MicroCommercial
Type: N-Channel MOSFET
Voltage Rating (VGS): ±20V
Drain-Source Breakdown Voltage (BV DSS): 60V
Continuous Drain Current (ID): 200A
Gate-Source Voltage (VGS): ±20V
Gate Threshold Voltage (VGS(th)): 3V
On-State Resistance (RDS(on)): 6mΩ
Total Gate Charge (Qg): 180nC
Mounting Style: Through Hole
Package/Case: TO-220-3
Product Details:
The MCB200N06Y-TP is a high-performance N-Channel MOSFET designed and manufactured by MicroCommercial. It features a Drain-Source Breakdown Voltage (BV DSS) of 60V and a Continuous Drain Current (ID) of 200A, making it suitable for a variety of high-power applications.
This MOSFET has a Gate-Source Voltage (VGS) rating of ±20V and a Gate Threshold Voltage (VGS(th)) of 3V. It has an On-State Resistance (RDS(on)) of 6mΩ, which ensures low conduction losses and high efficiency.
Additionally, the MCB200N06Y-TP has a Total Gate Charge (Qg) of 180nC, which ensures fast switching times and reduced switching losses. It has a Through Hole mounting style and comes packaged in a TO-220-3 package.
In summary, the MCB200N06Y-TP MOSFET from MicroCommercial is a high-performance device that provides efficient and reliable performance in a variety of high-power applications.
Stock:55548
Minimum Order:1
Product Parameter:
Model: MCB200N06Y-TP
Manufacturer: MicroCommercial
Type: N-Channel MOSFET
Voltage Rating (VGS): ±20V
Drain-Source Breakdown Voltage (BV DSS): 60V
Continuous Drain Current (ID): 200A
Gate-Source Voltage (VGS): ±20V
Gate Threshold Voltage (VGS(th)): 3V
On-State Resistance (RDS(on)): 6mΩ
Total Gate Charge (Qg): 180nC
Mounting Style: Through Hole
Package/Case: TO-220-3
Product Details:
The MCB200N06Y-TP is a high-performance N-Channel MOSFET designed and manufactured by MicroCommercial. It features a Drain-Source Breakdown Voltage (BV DSS) of 60V and a Continuous Drain Current (ID) of 200A, making it suitable for a variety of high-power applications.
This MOSFET has a Gate-Source Voltage (VGS) rating of ±20V and a Gate Threshold Voltage (VGS(th)) of 3V. It has an On-State Resistance (RDS(on)) of 6mΩ, which ensures low conduction losses and high efficiency.
Additionally, the MCB200N06Y-TP has a Total Gate Charge (Qg) of 180nC, which ensures fast switching times and reduced switching losses. It has a Through Hole mounting style and comes packaged in a TO-220-3 package.
In summary, the MCB200N06Y-TP MOSFET from MicroCommercial is a high-performance device that provides efficient and reliable performance in a variety of high-power applications.
