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LC98600CQ-01N-E

Manufacturer: Onsemi


onsemi-LC98600CQ-01N-E
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LC98600CQ-01N-E

The LC98600CQ-01N-E,from Onsemi,is Specialized ICsWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

The onsemi LC98600CQ-01N-E is a high voltage, high current, 3-phase gate driver IC. It is designed to be used with insulated-gate bipolar transistors (IGBTs) and power MOSFETs in applications such as motor drives, solar inverters, and uninterruptible power supplies.


Here are the product parameters and details:


Absolute Maximum Ratings:

Supply voltage range (VDD): -0.3 V to 26 V

High side floating supply voltage (VBS): -0.3 V to 600 V

Low side output voltage (Vout): -0.3 V to 26 V

Output peak source current (Iout, peak): ±2 A

Output peak sink current (Iout, peak): ±4 A

Output voltage with respect to COM (VOUT, COM): -0.3 V to 26 V

Maximum power dissipation (PD): 2.5 W

Operating junction temperature (TJ): -40 °C to 150 °C

Storage temperature range (Tstg): -55 °C to 150 °C


Features:

3-phase output stage with six outputs

Bootstrap operation up to 600 V

Schmitt-triggered inputs with hysteresis for noise immunity

3.3 V and 5 V TTL/CMOS compatible inputs

Integrated bootstrap diodes

UVLO protection for VDD and VBS

Active Miller clamping

Soft shutdown

Short circuit protection (DESAT)

Under voltage lockout (UVLO) protection

Over-temperature protection (OTP)

Compact 44-pin LQFP package


Applications:

Motor drives

Solar inverters

Uninterruptible power supplies (UPS)

Power factor correction (PFC) circuits

General purpose power switching applications


The LC98600CQ-01N-E,from Onsemi,is Specialized ICsWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

The onsemi LC98600CQ-01N-E is a high voltage, high current, 3-phase gate driver IC. It is designed to be used with insulated-gate bipolar transistors (IGBTs) and power MOSFETs in applications such as motor drives, solar inverters, and uninterruptible power supplies.


Here are the product parameters and details:


Absolute Maximum Ratings:

Supply voltage range (VDD): -0.3 V to 26 V

High side floating supply voltage (VBS): -0.3 V to 600 V

Low side output voltage (Vout): -0.3 V to 26 V

Output peak source current (Iout, peak): ±2 A

Output peak sink current (Iout, peak): ±4 A

Output voltage with respect to COM (VOUT, COM): -0.3 V to 26 V

Maximum power dissipation (PD): 2.5 W

Operating junction temperature (TJ): -40 °C to 150 °C

Storage temperature range (Tstg): -55 °C to 150 °C


Features:

3-phase output stage with six outputs

Bootstrap operation up to 600 V

Schmitt-triggered inputs with hysteresis for noise immunity

3.3 V and 5 V TTL/CMOS compatible inputs

Integrated bootstrap diodes

UVLO protection for VDD and VBS

Active Miller clamping

Soft shutdown

Short circuit protection (DESAT)

Under voltage lockout (UVLO) protection

Over-temperature protection (OTP)

Compact 44-pin LQFP package


Applications:

Motor drives

Solar inverters

Uninterruptible power supplies (UPS)

Power factor correction (PFC) circuits

General purpose power switching applications


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