UPB1051T6T-E1-A
Manufacturer: Renesas
Renesas-UPB1051T6T-E1-A is a high-performance N-channel MOSFET designed for use in power management applications. It is widely used in various electronic devices such as smartphones, tablets, and laptops. The MOSFET provides a reliable and efficient solution for power management in these devices.
Parameters:
Manufacturer: Renesas Electronics Corporation
Part Number: UPB1051T6T-E1-A
Drain-Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 2.5A
Total Gate Charge (Qg): 10.5nC
On-Resistance (Rds): 200mOhms
Operating Temperature Range: -55°C to +150°C
Pin Count: 6 pins
Package Type: SOT-23-6
Dimensions: 2.9mm x 1.6mm x 1.15mm
Description:
Renesas-UPB1051T6T-E1-A is a high-performance N-channel MOSFET that is designed to provide a reliable and efficient solution for power management applications in various electronic devices. The MOSFET features a drain-source voltage of 60V, a continuous drain current of 2.5A, and an on-resistance of 200mOhms, which makes it ideal for use in high-power applications.
One of the key advantages of Renesas-UPB1051T6T-E1-A is its low total gate charge of 10.5nC, which ensures fast switching and low power dissipation. The MOSFET also has a wide operating temperature range of -55°C to +150°C, which makes it suitable for use in harsh environments.
Renesas-UPB1051T6T-E1-A has 6 pins and is available in an SOT-23-6 package type, with dimensions of 2.9mm x 1.6mm x 1.15mm. The package is designed to provide good mechanical stability and ease of use.
In summary, Renesas-UPB1051T6T-E1-A is a high-performance N-channel MOSFET that provides a reliable and efficient solution for power management applications in various electronic devices. It has a high drain-source voltage, continuous drain current, and low on-resistance, which makes it ideal for use in high-power applications. It also has low total gate charge and wide operating temperature range, making it suitable for use in harsh environments. It is easy to use and offers good mechanical stability.
Stock:3299
Minimum Order:1
Renesas-UPB1051T6T-E1-A is a high-performance N-channel MOSFET designed for use in power management applications. It is widely used in various electronic devices such as smartphones, tablets, and laptops. The MOSFET provides a reliable and efficient solution for power management in these devices.
Parameters:
Manufacturer: Renesas Electronics Corporation
Part Number: UPB1051T6T-E1-A
Drain-Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 2.5A
Total Gate Charge (Qg): 10.5nC
On-Resistance (Rds): 200mOhms
Operating Temperature Range: -55°C to +150°C
Pin Count: 6 pins
Package Type: SOT-23-6
Dimensions: 2.9mm x 1.6mm x 1.15mm
Description:
Renesas-UPB1051T6T-E1-A is a high-performance N-channel MOSFET that is designed to provide a reliable and efficient solution for power management applications in various electronic devices. The MOSFET features a drain-source voltage of 60V, a continuous drain current of 2.5A, and an on-resistance of 200mOhms, which makes it ideal for use in high-power applications.
One of the key advantages of Renesas-UPB1051T6T-E1-A is its low total gate charge of 10.5nC, which ensures fast switching and low power dissipation. The MOSFET also has a wide operating temperature range of -55°C to +150°C, which makes it suitable for use in harsh environments.
Renesas-UPB1051T6T-E1-A has 6 pins and is available in an SOT-23-6 package type, with dimensions of 2.9mm x 1.6mm x 1.15mm. The package is designed to provide good mechanical stability and ease of use.
In summary, Renesas-UPB1051T6T-E1-A is a high-performance N-channel MOSFET that provides a reliable and efficient solution for power management applications in various electronic devices. It has a high drain-source voltage, continuous drain current, and low on-resistance, which makes it ideal for use in high-power applications. It also has low total gate charge and wide operating temperature range, making it suitable for use in harsh environments. It is easy to use and offers good mechanical stability.
