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25L04DM/B

Manufacturer: Rochester Electronics


Rochester Electronics-25L04DM/B
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25L04DM/B

The 25L04DM/B,from Rochester Electronics,is Specialized ICsWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

Rochester Electronics 25L04DM/B is a 4M-bit (512K x 8) SPI (Serial Peripheral Interface) Flash memory IC (Integrated Circuit) that provides non-volatile storage of data. This product is designed for use in various applications such as microcontrollers, data storage, and system configuration.


Here are some of the key features and specifications of this product:


Features:


4M-bit capacity: 512K x 8

High-speed operation: up to 104MHz

Low power consumption: 5mA (max) during write, 1mA (max) during read

SPI-compatible interface

Erase/write cycle endurance: 100,000 cycles (typical)

Specifications:


Operating temperature range: -40°C to 85°C

Write time: 3ms (max) per 256-byte page

Input voltage range: 2.7V to 3.6V

Output voltage range: 0V to Vcc

Standby current: 10uA (typical)

This product is commonly used in various applications that require non-volatile memory storage such as microcontrollers, data storage, and system configuration. The high-speed operation and SPI-compatible interface make it easy to integrate into existing systems. The low power consumption and wide operating voltage range make it suitable for use in battery-powered devices. The 25L04DM/B is available in various package options, including SOIC, WSON, and TFBGA.


The 25L04DM/B,from Rochester Electronics,is Specialized ICsWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

Rochester Electronics 25L04DM/B is a 4M-bit (512K x 8) SPI (Serial Peripheral Interface) Flash memory IC (Integrated Circuit) that provides non-volatile storage of data. This product is designed for use in various applications such as microcontrollers, data storage, and system configuration.


Here are some of the key features and specifications of this product:


Features:


4M-bit capacity: 512K x 8

High-speed operation: up to 104MHz

Low power consumption: 5mA (max) during write, 1mA (max) during read

SPI-compatible interface

Erase/write cycle endurance: 100,000 cycles (typical)

Specifications:


Operating temperature range: -40°C to 85°C

Write time: 3ms (max) per 256-byte page

Input voltage range: 2.7V to 3.6V

Output voltage range: 0V to Vcc

Standby current: 10uA (typical)

This product is commonly used in various applications that require non-volatile memory storage such as microcontrollers, data storage, and system configuration. The high-speed operation and SPI-compatible interface make it easy to integrate into existing systems. The low power consumption and wide operating voltage range make it suitable for use in battery-powered devices. The 25L04DM/B is available in various package options, including SOIC, WSON, and TFBGA.


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