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SQJ409EP-T1_GE3

Manufacturer: Vishay


VISHAY-SQJ409EP-T1_GE3
22+
POWERPAK-SO-8L-4
SQJ409EP-T1_GE3

The SQJ409EP-T1_GE3,from Vishay,is Integrated Circuits(ICs)What we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

Product parameters:

- Model: SQJ409EP-T1GE3

- Brand: VISHAY

- Package: D2PAK

- Maximum drain voltage: 100V

- Maximum leakage current: 4A

- Maximum static resistance: 43mΩ

- Maximum turn-on time: 100ns

- Maximum off time: 75ns

- Operating temperature range: -55°C~150°C

- Power supply voltage range: 4.5V~20V


Product Details:

SQJ409EP-T1GE3 is a high-performance DMOS field effect transistor with low turn-on resistance and fast switching characteristics, suitable for applications such as high-voltage gate drivers, direct DC/DC converters, battery protection, and transient protection. The product is packaged in ceramic chip D2PAK, which has good heat resistance, excellent thermal conductivity and stable mechanical properties, and can meet the working requirements in harsh environments such as high temperature and high power. SQJ409EP-T1GE3 also has functions such as over-current protection and over-temperature protection, which can effectively protect the safe and stable operation of the system. Cooperating with a comprehensive and reliable quality assurance system, this product has excellent cost performance and reliability, and is one of the indispensable high-quality components for the majority of electronic manufacturing enterprises.


The SQJ409EP-T1_GE3,from Vishay,is Integrated Circuits(ICs)What we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!

Product parameters:

- Model: SQJ409EP-T1GE3

- Brand: VISHAY

- Package: D2PAK

- Maximum drain voltage: 100V

- Maximum leakage current: 4A

- Maximum static resistance: 43mΩ

- Maximum turn-on time: 100ns

- Maximum off time: 75ns

- Operating temperature range: -55°C~150°C

- Power supply voltage range: 4.5V~20V


Product Details:

SQJ409EP-T1GE3 is a high-performance DMOS field effect transistor with low turn-on resistance and fast switching characteristics, suitable for applications such as high-voltage gate drivers, direct DC/DC converters, battery protection, and transient protection. The product is packaged in ceramic chip D2PAK, which has good heat resistance, excellent thermal conductivity and stable mechanical properties, and can meet the working requirements in harsh environments such as high temperature and high power. SQJ409EP-T1GE3 also has functions such as over-current protection and over-temperature protection, which can effectively protect the safe and stable operation of the system. Cooperating with a comprehensive and reliable quality assurance system, this product has excellent cost performance and reliability, and is one of the indispensable high-quality components for the majority of electronic manufacturing enterprises.


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