RJH60D2DPP-E0#T2
Manufacturer: Renesas
The RJH60D2DPP-E0#T2 is a power MOSFET from Renesas Electronics, designed for use in high-performance power switching applications. Here are its product parameters and details:
Product Parameters:
Manufacturer: Renesas Electronics
Product Category: Power MOSFETs
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600V
Continuous Drain Current: 60A
Rds On - Drain-Source Resistance: 32 mOhms
Vgs th - Gate-Source Threshold Voltage: 3V to 6V
Gate Charge: 180nC
Maximum Operating Temperature: 175°C
Product Details:
The RJH60D2DPP-E0#T2 is a high-performance N-channel power MOSFET that is designed to deliver efficient power switching in a range of applications. With a drain-source breakdown voltage of 600V and a continuous drain current of 60A, this MOSFET is capable of handling high power loads with ease. Its low drain-source resistance of 32 mOhms ensures minimal power loss and efficient operation.
The gate-source threshold voltage of 3V to 6V and gate charge of 180nC make this MOSFET easy to control and ideal for high-frequency switching applications. It also features a maximum operating temperature of 175°C, making it suitable for use in high-temperature environments.
Overall, the RJH60D2DPP-E0#T2 MOSFET offers a high level of performance, efficiency, and reliability for a wide range of power switching applications.
Stock:28364
Minimum Order:1
The RJH60D2DPP-E0#T2 is a power MOSFET from Renesas Electronics, designed for use in high-performance power switching applications. Here are its product parameters and details:
Product Parameters:
Manufacturer: Renesas Electronics
Product Category: Power MOSFETs
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600V
Continuous Drain Current: 60A
Rds On - Drain-Source Resistance: 32 mOhms
Vgs th - Gate-Source Threshold Voltage: 3V to 6V
Gate Charge: 180nC
Maximum Operating Temperature: 175°C
Product Details:
The RJH60D2DPP-E0#T2 is a high-performance N-channel power MOSFET that is designed to deliver efficient power switching in a range of applications. With a drain-source breakdown voltage of 600V and a continuous drain current of 60A, this MOSFET is capable of handling high power loads with ease. Its low drain-source resistance of 32 mOhms ensures minimal power loss and efficient operation.
The gate-source threshold voltage of 3V to 6V and gate charge of 180nC make this MOSFET easy to control and ideal for high-frequency switching applications. It also features a maximum operating temperature of 175°C, making it suitable for use in high-temperature environments.
Overall, the RJH60D2DPP-E0#T2 MOSFET offers a high level of performance, efficiency, and reliability for a wide range of power switching applications.
